MG1010 Datasheet - Microsemi

MG1010 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1010 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1010 Datasheet (205.73 KB)

MG1010 Datasheet Preview — Preview of MG1010 PDF

Datasheet Details

Part number:

MG1010

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

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MG1010 GUNN Diodes Microsemi

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