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MG1012, MG1001 Datasheet - Microsemi

MG1012 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1012 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1001-Microsemi.pdf

This datasheet PDF includes multiple part numbers: MG1012, MG1001. Please refer to the document for exact specifications by model.
MG1012 Datasheet Preview Page 2 MG1012 Datasheet Preview Page 3

Datasheet Details

Part number:

MG1012, MG1001

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

Note:

This datasheet PDF includes multiple part numbers: MG1012, MG1001.
Please refer to the document for exact specifications by model.

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TAGS

MG1012 MG1001 GUNN Diodes Microsemi

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