Datasheet Details
Part number:
MG1012, MG1001
Manufacturer:
File Size:
205.73 KB
Description:
Gunn diodes.
Note:
This datasheet PDF includes multiple part numbers: MG1012, MG1001.
Please refer to the document for exact specifications by model.
MG1012, MG1001, GUNN Diodes
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.
The layers are processed using proprietary techniques resulting in low phase and 1/f noise.
Our Gunn diodes are available in a varie
MG1012 Features
* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
* 95 GHz
* Low Phase Noise
* High Reliability Applications
* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* Radars
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