Part number:
MG1012
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205.73 KB
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Description:
Gunn diodes. Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor
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| Image | Manufacturer | Part Number | B2B mpn | Description | Distributor | In Stock | Quantity | Price | Buy Now |
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Diodes Incorporated | MG1012 | DMG1012UWQ-7 | MOSFET BVDSS: 8V~24V SOT323 T&R | DigiKey | 2808 | 1000 units |
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MG1012
205.73 KB
Gunn diodes. Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor
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