MG1016 Datasheet - Microsemi

MG1016 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1016 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1016 Datasheet (205.73 KB)

MG1016 Datasheet Preview — Preview of MG1016 PDF

Datasheet Details

Part number:

MG1016

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

📁 Related Datasheet

MG1010 GUNN Diodes (Microsemi)

MG1011 GUNN Diodes (Microsemi)

MG1012 GUNN Diodes (Microsemi)

MG1013 GUNN Diodes (Microsemi)

MG1014 GUNN Diodes (Microsemi)

MG1015 GUNN Diodes (Microsemi)

MG1017 GUNN Diodes (Microsemi)

MG1018 GUNN Diodes (Microsemi)

MG1019 GUNN Diodes (Microsemi)

MG100 Metal Glaze Resistors (HITANO)

TAGS

MG1016 GUNN Diodes Microsemi

Image Gallery

MG1016 Distributor