MG1020 Datasheet - Microsemi

MG1020 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1020 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1020 Datasheet (205.73 KB)

MG1020 Datasheet Preview — Preview of MG1020 PDF

Datasheet Details

Part number:

MG1020

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

📁 Related Datasheet

MG1021 GUNN Diodes (Microsemi)

MG1022 GUNN Diodes (Microsemi)

MG1023 GUNN Diodes (Microsemi)

MG1024 GUNN Diodes (Microsemi)

MG1025 GUNN Diodes (Microsemi)

MG100 Metal Glaze Resistors (HITANO)

MG1001 GUNN Diodes (Microsemi)

MG1001 GaAs Hall (Matrixopto)

MG1002 GUNN Diodes (Microsemi)

MG1003 GUNN Diodes (Microsemi)

TAGS

MG1020 GUNN Diodes Microsemi

Image Gallery

MG1020 Distributor