MG1025 Datasheet - Microsemi

MG1025 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1025 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1025 Datasheet (205.73 KB)

MG1025 Datasheet Preview — Preview of MG1025 PDF

Datasheet Details

Part number:

MG1025

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

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MG1025 GUNN Diodes Microsemi

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