MG1036, MG1001 - GUNN Diodes

Microsemi

MG1036 Datasheet Preview — This datasheet PDF includes multiple part numbers: MG1036, MG1001. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MG1036, MG1001
Manufacturer	Microsemi ↗
File Size	205.73 KB
Description	GUNN Diodes
Datasheet	MG1001-Microsemi.pdf
Note	This datasheet PDF includes multiple part numbers: MG1036, MG1001. Please refer to the document for exact specifications by model.

MG1036 Product details

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. 95 GHz.

Features

CW Designs to 500 mW.
Pulsed Designs to 10 W.
Frequency Coverage Specified from 5.9.
95 GHz.
Low Phase Noise.
High Reliability.

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Published: Feb 12, 2024 |