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MG1039, MG1001 Datasheet - Microsemi

MG1039 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1039 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1001-Microsemi.pdf

This datasheet PDF includes multiple part numbers: MG1039, MG1001. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MG1039, MG1001

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

Note:

This datasheet PDF includes multiple part numbers: MG1039, MG1001.
Please refer to the document for exact specifications by model.

MG1039 Distributor

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TAGS

MG1039 MG1001 GUNN Diodes Microsemi