Description
MSC2X31/30SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product l.
Features
* The following are key features of the MSC2X31SDA170J and MSC2X30SDA170J devices:
* No reverse recovery
* Low forward voltage
* Low leakage current
* Avalanche-energy rated
* RoHS compliant
* Isolated voltage to 2500 V
Benefits
The following are benefit
Applications
* MSC2X31/30SDA170J are dual 1700 V, 30 A SiC SBD devices in a SOT-227 package. Figure 1
* Parallel MSC2X31SDA170J
Figure 2
