Description
MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product l.
Features
* The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:
* No reverse recovery
* Low forward voltage
* Low leakage current
* Avalanche-energy rated
* RoHS compliant
* Isolated voltage to 2500 V
Benefits
The following are benefit
Applications
* MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package. Figure 1
* Parallel MSC2X31SDA120J
Figure 2
