SM1003 Datasheet | Microsemi

DESCRIPTION This line of ‘MELF’ high power PIN diodes are hermetically sealed surface mount packaged devices with full face bonded chips for low inductance construction. The MELF ceramic package has square end terminations which are ideal for surface mount and pick and place operations. The PIN diode chips are coated with a special hard glass passivation which is required for high power applications and to enhance the reliability resulting in MTBFs of greater than one million hours. Ro HS pliant versions of these products meet Ro HS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. SM0502 - SM1003 CONTROL DEVICES Surface Mount - MELF PIN Diodes Ro HS pliant Versions . KEY FEATURES - Non-Magnetic1 Versions Ideal for MRI Applications - Very Low Inductance, Full Face Bonding - Hi-Rel Hermetic Design - Surface Mount Devices Available in Tape and Reel - Ro HS pliant2 Versions Available .MICROSEMI. APPLICATIONS The MELF diodes are used as switching, attenuating and phase shifting elements from HF through 2 GHz and have breakdown voltage ratings up to 500 volts. ‘Non-magnetic1’ .Cer-Met. (MELFs) are also used as switching elements in MRI (magnetic resonance imaging). Conventional Magnetic MELF packages are used in Cellular, Beam Steering units (telephone via satellites) surface mount applications, and Filter Switch banks for Frequency Hopping Radios. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current @80% of Minimum Rated VB 500 n A Forward Current (1us Pulse) Storage Temperature TSTG -55 to +150 ºC Operating Temperature -55 to +150 ºC Maximum Solder Temperature ºC...