Datasheet Details
- Part number
- PPNHZ52F120A
- Manufacturer
- Microsemi ↗ Corporation
- File Size
- 102.84 KB
- Datasheet
- PPNHZ52F120A_MicrosemiCorporation.pdf
- Description
- N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
PPNHZ52F120A Description
PPC INC.7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52F120A .
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc).
PPNHZ52F120A Features
* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120
📁 Related Datasheet
📌 All Tags