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2SK2973 Datasheet - Mitsubishi Electric Semiconductor

2SK2973_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

2SK2973

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

33.56 KB

Description:

Rf power mos fet.

2SK2973, RF POWER MOS FET

2SK2973 Features

* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm

* High efficiency:55% typ.

* Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1.5 0.53 MAX

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