Part number:
2SK2973
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
33.56 KB
Description:
Rf power mos fet.
* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
* High efficiency:55% typ.
* Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1.5 0.53 MAX
2SK2973
Mitsubishi Electric Semiconductor
33.56 KB
Rf power mos fet.
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