2SK2973 Datasheet, Mos Fet, Mitsubishi Electric Semiconductor

Rf power mos fet

2SK2973

Mitsubishi Electric Semiconductor

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Rf power mos fet.
2SK2973 iMOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

OUTLINE DRAWING
4.

High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
High efficiency:55% typ.
Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION

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TAGS

2SK2973 POWER MOS FET Mitsubishi Electric Semiconductor