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2SK2974 - RF POWER MOS FET

Description

2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

Features

  • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm.
  • High efficiency:55% typ.
  • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX.

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Datasheet preview – 2SK2974

Datasheet Details

Part number 2SK2974
Manufacturer Mitsubishi Electric Semiconductor
File Size 29.26 KB
Description RF POWER MOS FET
Datasheet download datasheet 2SK2974 Datasheet
Additional preview pages of the 2SK2974 datasheet.

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Full PDF Text Transcription

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MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No. LOT No.
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