2SK2974 Datasheet, Fet, Mitsubishi Electric Semiconductor

✔ 2SK2974 Features

High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm
High efficiency:55% typ.
Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0

✔ 2SK2974 Application

OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES
High power gain:Gpe≥8.4dB @VDD=7

PDF File Details

Mitsubishi Electric Semiconductor manufacturer logo

Part number:

2SK2974

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

29.26 KB

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📄 Datasheet

Description:

Rf power mos fet. 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TO

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2SK2974 POWER MOS FET Mitsubishi Electric Semiconductor