Part number:
2SK2975
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
29.51 KB
Description:
Rf power mos fet.
2SK2975_MitsubishiElectricSemiconductor.pdf
Datasheet Details
2SK2975 Features
* High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
* High efficiency:55% typ.
* Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable
2SK2975_MitsubishiElectricSemiconductor.pdf
Datasheet Details
2SK2975
Mitsubishi Electric Semiconductor
29.51 KB
Rf power mos fet.
2SK2975 Distributor
📁 Related Datasheet
2SK2972 N-Channel MOSFET (VBsemi)
2SK2972 N-Channel MOSFET (Toshiba)
2SK2973 RF POWER MOS FET (Mitsubishi Electric Semiconductor)
2SK2974 RF POWER MOS FET (Mitsubishi Electric Semiconductor)
2SK2976 N-Channel MOSFET (Sanyo Semicon Device)
2SK2977LS N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2978 Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2978 Silicon N-Channel MOSFET (Renesas)