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2SK2975 RF POWER MOS FET

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Description

MITSUBISHI RF POWER MOS FET 2SK2975 .
2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

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Features

* High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
* High efficiency:55% typ.

2SK2975 Distributors

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📌 All Tags

POWER MOS FET Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor 2SK2975-like datasheet