Part number:
2SK2975
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
29.51 KB
Description:
Rf power mos fet.
Datasheet Details
2SK2975 Features
* High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
* High efficiency:55% typ.
* Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable
Datasheet Details
2SK2975
Mitsubishi Electric Semiconductor
29.51 KB
Rf power mos fet.
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