2SK2975 Datasheet - Mitsubishi Electric Semiconductor

2SK2975_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

2SK2975

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

29.51 KB

Description:

Rf power mos fet.

2SK2975, RF POWER MOS FET

2SK2975 Features

* High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm

* High efficiency:55% typ.

* Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable

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2SK2975 POWER MOS FET Mitsubishi Electric Semiconductor