CT35SM-8 Datasheet - Mitsubishi Electric Semiconductor

CT35SM-8 Transistor

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e q ¡VCES 400V ¡ICM 200A TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Ju.

CT35SM-8_MitsubishiElectricSemiconductor.pdf