RA07M1317M Silicon RF Power Modules

Mitsubishi Electric Semiconductor

Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M BLOCK DIAGRAM 2 3 135-175MHz 6.5W 7.2V, 2 Stage A.
The RA07M1317M is a 6.

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Datasheet Specifications

Part number: RA07M1317M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 573.13 KB
Datasheet: RA07M1317M_MitsubishiElectricSemiconductor.pdf
Description: Silicon RF Power Modules

Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V)
* Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
* ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20mW
* Broadband Frequency Range: 135-175MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA07M1317M Distributors

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RA07M1317M Silicon Power Modules Mitsubishi Electric Semiconductor

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