RA07M1317M Datasheet - Mitsubishi Electric Semiconductor

RA07M1317M Silicon RF Power Modules

The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the.

RA07M1317M Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V)

* Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW

* ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20mW

* Broadband Frequency Range: 135-175MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA07M1317M_MitsubishiElectricSemiconductor.pdf