RA07M1317M Datasheet, Modules, Mitsubishi Electric Semiconductor

RA07M1317M Features

• Modules
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V)
• Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
• ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20m

PDF File Details

Part number:

RA07M1317M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

573.13kb

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📄 Datasheet

Description:

Silicon rf power modules. The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range. The bat

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RA07M1317M

Mitsubishi Electric Semiconductor

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