RD30HUF1 - Silicon MOSFET
RD30HUF1 Features
* 1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source
