RD30HUF1 Datasheet, Mosfet, Mitsubishi Electric Semiconductor

RD30HUF1 Features

• Mosfet 1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.Gate UNIT:mm ABSOLUTE

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Part number:

RD30HUF1

Manufacturer:

Mitsubishi Electric Semiconductor

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398.12kb

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📄 Datasheet

Description:

Silicon mosfet. RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE

Hi

RD30HUF1 Application

• Applications 7.2+/-0.5 OUTLINE
• High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
• High Efficiency: 55%typ. 2 3 R1.6 14.0

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RD30HUF1

Mitsubishi Electric Semiconductor

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