RD30HVF1 Datasheet, Transistor, Mitsubishi Electric

RD30HVF1 Features

  • Transistor 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMP

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Part number:

RD30HVF1

Manufacturer:

Mitsubishi Electric

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398.19kb

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transisto

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Page 2 of RD30HVF1 Page 3 of RD30HVF1

RD30HVF1 Application

  • Applications Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.

TAGS

RD30HVF1
Silicon
MOSFET
Power
Transistor
Mitsubishi Electric

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