Part number: 2SC2312
Manufacturer: Mitsubishi Electric
File Size: 114.59KB
Download: 📄 Datasheet
Description: RF POWER TRANSISTOR
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2SC2310 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC458 (LG), 2SC2310
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Application
• Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032
Outline
TO-.
2SC2310 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC2310
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features
2SA1029 。 Comple.
2SC2310 - NPN Silicon Epitaxial Planar Transistor
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ST 2SC2310
NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier .
The transistor is subdivided into two groups B and C according.
2SC2310 - NPN Silicon Epitaxial Planar Transistor
(CHINA BASE)
2SC2310
NPN Silicon Epitaxial Planar Transistor
low frequency, low noise amplifier.
The transistor is subdivided into two groups B and C according to.
2SC2312 - Silicon NPN Transistor
(ELEFLOW TECHNOLOGIES)
ELEFLOW TECHNOLOGIES
www.eleflow.com
2SC2312
www..net
1
ELEFLOW TECHNOLOGIES
www.eleflow.com
2SC2312
2
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2SC2312 - NPN Silicon Epitaxial Planar Transistor
(Mitsubishi Electric)
www..net
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2SC2312 - Silicon NPN POWER TRANSISTOR
(HGSemi)
G H
FEATURES
• • • •
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2312
–T–
SEATING PLANE 4
DESCRIPTION
D.
2SC2314 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN485F
NPN Epitaxial Planar Silicon Transistor
2SC2314
27MHz CB Transceiver Driver Applications
Package Dimensions
unit:mm 2009B
[2SC.
2SC2314 - NPN EPITAXIAL PLANAR SILICON TRANSISTORS
(TGS)
TIGER ELECTRONIC CO.,LTD
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
Product specification
2SC2314
DESCRIPTION 27 MHz CB Transceiver Driver Applicatio.
2SC2314 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Voltage-
:VCER= 75V(Min) ;RBE=150Ω ·Collector Current-
:IC=1.5A ·Low Saturation Volta.
