* G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G “L” active level input G With input diode G Wide operating temperature range (Ta =
* 40 to +85° C) INPUT IN4 IN5 IN6 IN7 GND 16P2S-A(GP) Package type 16P2Z-A(KP) APPLICAT
M63832GP
Mitsubishi Electric
86.33 KB
(m63832xp) 7-unit 500ma darlington transistor-array.
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MITSUBISHI SEMICONDUCTOR
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