* G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 1.5A) G 3V micro computer series compatible input G With clamping diodes G With input diode G Wide operating temperature range (Ta =
* 40 to +85° C) INPUT1 IN1 GND 5 12 11 10 9 INPUT2 IN2 OUTPUT2 O2 VCC 6 7 8 IN3
M63830P
Mitsubishi Electric
91.16 KB
(m63830xp) 4-unit 1.5a darlington transistor-array.
www.DataSheet4U.com
on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som
MITSUBISHI SEMICONDUCTOR
📁 Related Datasheet
M63830FP (M63830xP) 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63832GP (M63832xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63832KP (M63832xP) 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63834FP (M63834xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63834KP (M63834xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63836FP (M63836xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63836KP (M63836xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY (Mitsubishi Electric)
M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE (Mitsubishi)
M63802FP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
M63802GP (M63802xx) 7-UNIT 300mA TRANSISTOR ARRAY (Mitsubishi Electric)
