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M2V56S30AKT Datasheet - Mitsubishi

M2V56S30AKT - 256M Synchronous DRAM

M2V56S20AKT is a 4-bank x 16777216-word x 4-bit, M2V56S30AKT is a 4-bank x 8388608-word x 8-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface.

All inputs and outputs are referenced to the rising edge of CLK.

The M2V56S20/30/40 AKT achieve very high speed da

M2V56S30AKT Features

* - Single 3.3v±0.3V power supply - Max. Clock frequency -5:PC166 / -6:PC133 / -7:PC100 - Fully Synchronous operation referenced to clock rising edge - Single Data Rate - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/

M2V56S30AKT_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

M2V56S30AKT

Manufacturer:

Mitsubishi

File Size:

620.06 KB

Description:

256m synchronous dram.

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