RA60H3847M1 Datasheet (Mitsubishi) - Silicon RF Power Modules

RA60H3847M1, Silicon RF Power Modules

The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range.

The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors.

Without the gate voltage (VGG=0V), only a small leak

RA60H3847M1 Features

* Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)

* Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 378-470MHz

* Metal shield structure that makes the improvements of spurious radiation simple

* Module Size: 67 x 19.4