RA60H3847M1 Silicon RF Power Modules

Mitsubishi

Description

< Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp.For MOBILE RADIO .
The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA60H3847M1
Manufacturer: Mitsubishi
File Size: 607.38 KB
Datasheet: RA60H3847M1-Mitsubishi.pdf
Description: Silicon RF Power Modules

Features

* Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V)
* Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 378-470MHz
* Metal shield structure that makes the improvements of spurious radiation simple
* Module Size: 67 x 19.4

RA60H3847M1 Distributors

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RA60H3847M1 Silicon Power Modules Mitsubishi

Mitsubishi RA60H3847M1-like datasheet