RA60H3847M1 - Silicon RF Power Modules

Mitsubishi

RA60H3847M1 Datasheet Preview — Preview of RA60H3847M1 PDF

Datasheet Details

Part number	RA60H3847M1
Manufacturer	Mitsubishi
File Size	607.38 KB
Description	Silicon RF Power Modules
Datasheet	RA60H3847M1-Mitsubishi.pdf

RA60H3847M1 Product details

Description

The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to BLOCK DIAGRAM 470-MHz range.The battery can be connected directly to the drain of the 2 3 enhancement-mode MOSFET transistors.Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.The output power and the drain current increase as the gate voltage increases.The output power and t

Features

Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=12.5V, VGG=0V).
Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 378-470MHz.
Metal shield structure that makes the improvements of spurious radiation simple.
Module Size: 67 x 19.4 x 9.9 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 RF Input (Pin) 2 Gate Voltage (.

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Published: Apr 16, 2019 |