* 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch
RD70HHF1 Datasheet (242.59 KB)
RD70HHF1
Mitsubishi
242.59 KB
Silicon mosfet power transistor.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HHF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Po.
📁 Related Datasheet
RD70HVF1 Silicon MOSFET Power Transistor (Mitsubishi)
RD70VHF1 Nch MOS FET (ETC)
RD7.5E Zener diode (Excel Semiconductor)
RD7.5E SILICON ZENER DIODES (EIC)
RD7.5E Zener Diode (NEC)
RD7.5E 500mW PLANAR TYPE SILICON ZENER DIODES (Renesas)
RD7.5EB ZENER DIODES (SEMTECH)
RD7.5ES Zener diode (WEJ)
RD7.5ES ZENER DIODES (EIC)
RD7.5ES Zener Diode (NEC)
