* High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band 24.0+/-0.6 2 10.0+/-0.3 9.6+/-0.3 3 R1.6+/-0.15 0.1 -0.01 4.5+/-0.7 6.2+/-0.7 +0.05 APPLICATION For output stage of
RD70HVF1 Datasheet (562.14 KB)
RD70HVF1
Mitsubishi
562.14 KB
Silicon mosfet power transistor.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HVF1 DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 RoHS Comp.
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