RD70HVF1 Datasheet, Transistor, Mitsubishi

RD70HVF1 Features

• Transistor High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band 24.0+/-0

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RD70HVF1

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Mitsubishi

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. OUTLINE 4-C2 FEATURES

RD70HVF1 Application

• Applications OUTLINE 4-C2 FEATURES High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High

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RD70HVF1

Mitsubishi

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