epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity pr
S20C60, Mospec Semiconductor
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S20C100, MOSPEC
MOSPEC
S20C70 Thru S20C100
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-th.
S20C100C, Mospec Semiconductor
MOSPEC
S20C70C Thru S20C100C
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-.
S20C200C, MOSPEC
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The prop.
S20C30, Mospec Semiconductor
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S20C35, Mospec Semiconductor
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.