BS107 - TMOS Switching(N-Channel-Enhancement)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N Channel Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg
