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BS170 Datasheet - Motorola Inc

BS170 - N-channel MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N Channel Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 ± 20 ± 40 0.5 350 1 Unit Vdc Vdc Vpk

BS170_MotorolaInc.pdf

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Datasheet Details

Part number:

BS170

Manufacturer:

Motorola Inc

File Size:

77.58 KB

Description:

N-channel mosfet.

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