MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N Channel Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 ± 20 ± 40 0.5 350 1 Unit Vdc Vdc Vpk
Datasheet Details
Part number:
BS170
Manufacturer:
Motorola Inc
File Size:
77.58 KB
Description:
N-channel mosfet.