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BS108 Datasheet - Motorola Inc

BS108 200 VOLTS N-CHANNEL TMOS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Low Drive Requirement, VGS = 3.0 V max Inherent Current Sharing Capability Permits Easy Paralleling of many Devices 2 GATE 3 SOUR.

BS108 Datasheet (58.88 KB)

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Datasheet Details

Part number:

BS108

Manufacturer:

Motorola Inc

File Size:

58.88 KB

Description:

200 volts n-channel tmos.

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TAGS

BS108 200 VOLTS N-CHANNEL TMOS Motorola Inc

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