MJ10012
Motorola Inc
191.80 KB
10 ampere power transistors.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10012/D
NPN Silicon Power Darlington Transistor
The MJ10012 and MJH10012 are high
📁 Related Datasheet
MJ1001 - Medium-Power Complementary Silicon Transistors
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ1000/D
Medium-Power Complementary Silicon Transistors
. . . for use as output device.
MJ1001 - (MJ1000 / MJ1001) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
..
DESCRIPTION ·With TO-3 package ·DARLIN.
MJ1001 - (MJ1000 / MJ1001) Complementary Power Darlingtons
(Comset Semiconductors)
NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, a.
MJ10012 - NPN Silicon Transistor
(Wing Shing Computer Components)
MJ10012
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characterist.
MJ10012 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ10012
DESCRIPTION ·With TO-3 package ·High voltage,high current ·DARLIN.
MJ10012 - NPN Silicon Power Darlington Transistor
(NTE)
MJ10012 NPN Silicon Power Darlington Transistor
TO3 Type Package
Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO.
MJ10012T - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGT.
MJ10013 - Power Transistors
(Mospec Semiconductor)
A
A
A
A
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