MJ10022
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
Designer's
MJ10022 MJ10023
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
The MJ10022 and MJ10023 Darlington transistors are designed for high- voltage, high- speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line- operated switchmode applications such as: AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn- Off Times 150 ns Inductive Fall Time @ 25_C (Typ) 300 ns Inductive Storage Time @ 25_C (Typ)
- Operating Temperature Range
- 65 to + 200_C
- 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MAXIMUM RATINGS
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- CASE 197A- 05 TO- 204AE (TO- 3) ≈ 100 ≈ 15
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