2N1742
Motorola
95.93 KB
Pnp transistor.
499
Germanium PNP high frequency transistors designed
2N
for driver applications, small-signal amplification, wide
(2N499JANAVAILABLE) band video .
📁 Related Datasheet
2N174 - PNP germanium power transistors
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173 2N
(GERMANIUM)
For Specifications, See 2N277 Data.
174 2N
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2Nl100
2N1358,A
CASE 5
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Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N1702 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=60V(Min) ·Minimum Lot-to-Lot variations for robust device
P.
2N1705 - PNP Transistor
(Motorola)
2N 1692, 2N 1693
For Specifications, See 2N1561 Data.
2N1705 thru 2N1707 (GERMANIUM)
PNP germanium transistors for audio driver applications in tran.
2N1706 - PNP Transistor
(Motorola)
2N 1692, 2N 1693
For Specifications, See 2N1561 Data.
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2N1707 - PNP Transistor
(Motorola)
2N 1692, 2N 1693
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2N1708 - NPN silicon transistor
(Motorola)
1708 2N
(SILICON)
CASE 26
(TO-.oI6)
\
Collector electrically connected to case
NPN silicon transistor designed for very highspeed, low-power satu.
2N1711 - NPN LOW POWER SILICON TRANSISTOR
(Microsemi)
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
2N1711
2N1890
Qualified Level
JAN JANTX
MAXIMUM RATINGS
.
