2N1722 - NPN SILICON HIGH POWER TRANSISTOR
TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA betwee
