Datasheet4U Logo Datasheet4U.com

2N1722 Datasheet - Microsemi

2N1722 NPN SILICON HIGH POWER TRANSISTOR

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA betwee.

2N1722_Microsemi.pdf

Preview of 2N1722 PDF
2N1722 Datasheet Preview Page 2

Datasheet Details

Part number:

2N1722

Manufacturer:

Microsemi ↗

File Size:

82.86 KB

Description:

Npn silicon high power transistor.

📁 Related Datasheet

2N1722 Triple Diffused Power Transistors (New Jersey Semi-Conductor)

2N1722A Triple Diffused Power Transistors (New Jersey Semi-Conductor)

2N1723 Triple Diffused Power Transistors (New Jersey Semi-Conductor)

2N1724 NPN silicon power transistors (Motorola)

2N1724 NPN SILICON HIGH POWER TRANSISTOR (Microsemi)

2N1724 Triple Diffused Power Transistors (New Jersey Semi-Conductor)

2N1724 NPN Silicon Power Transistor (SSDI)

2N1724A Triple Diffused Power Transistors (New Jersey Semi-Conductor)

TAGS

2N1722 2N1722 NPN SILICON HIGH POWER TRANSISTOR Microsemi

2N1722 Distributor