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2N1711, 2N1711S 2N1890, 2N1890S
NPN Low Power Silicon Transistor
Rev. V1
Features
• Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225 • TO-5 and TO-39 Packages • General Purpose Transistors for Low Power Applications • Ideal for High Performance Low Noise Amplifiers, Oscillators and Switching
Circuits
Electrical Characteristics (25oC unless otherwise specified)
Parameter Collector - Emitter Breakdown Voltage
Test Conditions
IC = 30 mA dc 2N1711, 2N1711S 2N1890, 2N1890S
Symbol Units Min.
V(BR)CEO V dc
30
60
Collector - Emitter Breakdown Voltage
IC = 100 mA dc, RBE = 10 Ω 2N1711, 2N1711S 2N1890, 2N1890S
V(BR)CER V dc
50
80
Max.
2N1711S Datasheet
