2N1479 Datasheet | VPT Components

Features - Available in JAN Quality Level per MIL-PRF-19500/207 - TO-205AA (TO-5) and TO-205AD (TO-39) Packages - “S” Suffix Denotes TO-205AD (TO-39) Package Style - General Purpose Transistors for Medium Power Applications Requiring High Frequency Switching Electrical Characteristics (25o C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Test Conditions IE = 50 m A dc 2N1479, 2N1481 2N1480, 2N1482 Symbol Units Min. V(BR)CEO V dc Collector - Emitter Breakdown Voltage IC = 0.25 m A dc, VEB = 1.5V dc 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEX V dc Max. - - Emitter - Base Cutoff Current VEB = 12 V dc IEBO µA dc - 10 Collector - Emitter Cutoff Current Collector - Base Cutoff Current Forward-Current Transfer Ratio Collector - Base Cutoff Current Forward-Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Voltage (unsaturated) VCE = 60 Vdc VCB = 30 V dc 2N1479, 2N1481 VCB = 50 V dc 2N1480, 2N1482 IC = 200 m A dc; VCE = 4 V dc 2N1479, 2N1480 2N1481, 2N1482 TA = 150o C VCB = 30 V dc 2N1479, 2N1481 VCB = 50 V dc 2N1480, 2N1482 TA = -55o C IC = 200 m A dc, VCE = 4 V dc 2N1479, 2N1480 2N1481, 2N1482 IC = 200 m A dc IB = 20 m A dc, 2N1479, 2N1480 IB = 10 m A dc, 2N1481, 2N1482 IC = 200 m A dc, VCE = 4 V...