The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N1479, 2N1480, 2N1481, 2N1482 2N1479S, 2N1480S, 2N1481S,
NPN Medium Power Silicon Transistor
Rev. V3
Features
• Available in JAN Quality Level per MIL-PRF-19500/207 • TO-205AA (TO-5) and TO-205AD (TO-39) Packages • “S” Suffix Denotes TO-205AD (TO-39) Package Style • General Purpose Transistors for Medium Power Applications Requiring
High Frequency Switching
Electrical Characteristics (25oC unless otherwise specified)
Parameter Collector - Emitter Breakdown Voltage
Test Conditions
IE = 50 mA dc 2N1479, 2N1481 2N1480, 2N1482
Symbol Units Min.
V(BR)CEO V dc
40
50
Collector - Emitter Breakdown Voltage
IC = 0.25 mA dc, VEB = 1.5V dc 2N1479, 2N1481 2N1480, 2N1482
V(BR)CEX V dc
60
100
Max.