2N1479 Datasheet | Microsemi

TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 2N1480 2N1481 2N1482 Qualified Level MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current Total Power Dissipation @ TA = 250C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJC 2N1479 2N1481 40 60 12 1.5 1.0 1.0 2N1480 2N1482 55 100 Unit Vdc Vdc Vdc Adc Adc W -65 to +200 Max. 35 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-5- - See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 m Adc Collector-Emitter Breakdown Voltage VEB = 1.5 Vdc, IC = 0.25 m Adc VEB = 1.5 Vdc, IC = 0.25 m Adc Collector-Base Cutoff Current VCB = 30 Vdc VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 12 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1479, 2N1480, 2N1481, 2N1482 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 200 m Adc, VCE = 4.0 Vdc Collector-Emitter Saturation Voltage IC = 200 m Adc, IB = 20 m Adc IC = 200 m Adc, IB = 10 m Adc Base-Emitter Voltage IC = 200 m Adc, VCE = 4.0 Vdc 2N1479, 2N1480 2N1481, 2N1482 2N1479, 2N1480 2N1481, 2N1482 h FE 20 35 60 100 0.75 0.75 1.5 Vdc Vdc VCE(sat) VBE DYNAMIC CHARACTERISTICS Forward Current Cutoff Frequency IC = 5.0 m Adc, VCB = 28 Vdc f ab 800 k Hz SWITCHING CHARACTERISTICS...