2N1711 - NPN LOW POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N1711
Manufacturer	Microsemi (now Microchip Technology)
File Size	48.61 KB
Description	NPN LOW POWER SILICON TRANSISTOR
Datasheet	2N1711 Datasheet

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 75 100 7.0 500 0.8 3.0 -65 to +200 Max.