• Part: 2N1711
  • Description: NPN LOW POWER SILICON TRANSISTOR
  • Manufacturer: Microsemi
  • Size: 48.61 KB
Download 2N1711 Datasheet PDF
2N1711 page 2
Page 2

Datasheet Summary

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 75 100 7.0 500 0.8 3.0 -65 to +200 Max. 58 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector...