2N1711 - Silicon Planar Epitaxial Transistors

Comset Semiconductor

Download the 2N1711 datasheet PDF. This datasheet also covers the 2N1613 variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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2N1711 silicon planar epitaxial transistors by Comset Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N1613_ComsetSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N1711
Manufacturer	Comset Semiconductor
File Size	128.91 KB
Description	Silicon Planar Epitaxial Transistors
Datasheet	2N1711 Datasheet

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Other Datasheets by Comset Semiconductor

Part Number	Description
2N1613	Silicon Planar Epitaxial Transistors
2N1893	Medium Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCER VEBO IC ICM IBM PD TJ TStg Ratings Collector-Base Voltage Collector-Emitter Voltage (RBE = 10Ω) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature range Value 75 50 7 5 1 200 3 1.7 0.8 200 -65 to +150 Unit V V V mA A mA W W W °C °C www.DataSheet.