| Part Number | 2N1711 |
|---|---|
| Manufacturer | Comset Semiconductor |
| Overview |
NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use .
asheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N1613 * 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCE=60 V, IE=0 VCE=60 V, IE=0 Tamb = 150°C VEB=5 V VEB=5 V IC=0.1 mA IE=100 µA . |
2N1711 Datasheet
The 2N1711 is a Silicon Planar Epitaxial Transistors.
| Part Number | 2N1711 |
|---|---|
| Description | NPN LOW POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Volta. . |
| Part Number | 2N1711 |
|---|---|
| Description | NPN TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS:. . |
| Part Number | 2N1711 |
|---|---|
| Description | SWITCHES AND UNIVERSAL AMPLIFIERS |
| Manufacturer | STMicroelectronics |
| Overview | The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is . ERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Test Conditions V CB = 60 V V CB = 60 V V EB = 5 V T am b = 150 °C for 2N 16 13 for 2N 17 11 Min. Typ. Max. 10 10 10 5 Unit nA µA nA. |