2N3330
Motorola
29.45 KB
Jfet amplifier.
2N3330
MAXIMUM RATINGS
Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Total Device Dissipation (d T/ = 25°C
Derate above 25°C Sto.
📁 Related Datasheet
2N3330 - P-Channel JFET
(InterFET)
InterFET
Product Folder
Technical Support
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2N3330-1
2N3330, 2N3331 P-Channel JFET
Features
• InterFET P0032F Geometry • Typical Noise: .
2N3330 - p-channel JFET
(Siliconix)
p-channel JFETs
designed for • • •
• Small-Signal Amplifiers • Analog Multipliers • Modulators
H
Performance Curves PC See Section 4
BENEFITS
• Ease .
2N3331 - P-Channel JFET
(InterFET)
InterFET
Product Folder
Technical Support
Order Now
2N3330-1
2N3330, 2N3331 P-Channel JFET
Features
• InterFET P0032F Geometry • Typical Noise: .
2N3331 - p-channel JFET
(Siliconix)
p-channel JFETs
designed for • • •
• Small-Signal Amplifiers • Analog Multipliers • Modulators
H
Performance Curves PC See Section 4
BENEFITS
• Ease .
2N3332 - p-channel JFET
(Siliconix)
p-channel JFETs
designed for • • •
• Small-Signal Amplifiers • Analog Multipliers • Modulators
H
Performance Curves PC See Section 4
BENEFITS
• Ease .
2N3300 - GENERAL PURPOSE TRANSISTOR
(Motorola)
2N3299
2N3300
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
2N3301 2N3302
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Applicab.
2N3300 - Small Signal Transistors
(Central)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.
2N3300 - Bipolar NPN Device
(Seme LAB)
2N3300
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
