2N4072
Motorola
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Npn silicon annular transistors.
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2N4070 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N4070 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
2N4071 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
2N4073 - NPN silicon annular transistors
(Motorola)
2N4072 (SILICON) 2N4073
NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_
CASE 22
(TO-18).
2N40 - N-Channel MOSFET
(ART CHIP)
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs design.
2N40 - N-Channel Power MOSFET
(Unisonic Technologies)
2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using .
2N40-V - 400V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N40-V
2.0A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40-V is a high voltage power MOSFET and is designed to.
2N4000 - Bipolar NPN Device
(Seme LAB)
2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N4001 - Bipolar NPN Device
(Seme LAB)
2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N4002 - PNP Epitaxial Silicon Transistor
(SEMTECH)
ST 2N4402 / 2N4403
PNP Epitaxial Silicon Transistor
General purpose transistor
On special request, these transistors can be manufactured in different.
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