Datasheet4U Logo Datasheet4U.com

2N4012 - NPN silicon annular transistor

2N4012 Description

12 2N40 (SILICON) ~E3~ (TO *60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications.MAXI.

2N4012 Applications

* MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1. 5 Vdc) VCEO VCEV Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate Above 25°C Op

📥 Download Datasheet

Preview of 2N4012 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N4012
Manufacturer
Motorola
File Size
97.13 KB
Datasheet
2N4012-Motorola.pdf
Description
NPN silicon annular transistor

📁 Related Datasheet

  • 2N4010 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor (Crystalonics)
  • 2N4011 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor (Crystalonics)
  • 2N4013 - Silicon NPN Transistor (ASI)
  • 2N4014 - Silicon Planar Epitaxial transistor (STMicroelectronics)
  • 2N40 - N-Channel MOSFET (ART CHIP)
  • 2N40-V - 400V N-CHANNEL POWER MOSFET (UTC)
  • 2N4000 - Bipolar NPN Device (Seme LAB)
  • 2N4001 - Bipolar NPN Device (Seme LAB)

📌 All Tags

NPN silicon annular transistor Motorola
Motorola 2N4012-like datasheet