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2N4012 - NPN silicon annular transistor

2N4012 Description

12 2N40 (SILICON) ~E3~ (TO *60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications.MAXI.

2N4012 Applications

* MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1. 5 Vdc) VCEO VCEV Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate Above 25°C Op

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Datasheet Details

Part number
2N4012
Manufacturer
Motorola
File Size
97.13 KB
Datasheet
2N4012-Motorola.pdf
Description
NPN silicon annular transistor

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Motorola 2N4012-like datasheet