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2N4012 Datasheet - Motorola

2N4012 NPN silicon annular transistor

12 2N40 (SILICON) ~E3~ (TO 60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications. MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1. 5 Vdc) VCEO VCEV Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate Above 25°C Operating and Storage Junction Temperature Range TJ,Tstg .

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Datasheet Details

Part number:

2N4012

Manufacturer:

Motorola

File Size:

97.13 KB

Description:

Npn silicon annular transistor.

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