2N4012 Datasheet (Motorola) - NPN silicon annular transistor

2N4012, NPN silicon annular transistor

12 2N40 (SILICON) ~E3~ (TO 60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications.

MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1.

5 Vdc) VCEO VCEV Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate Above 25°C Operating and Storage Junction Temperature Range TJ,Tstg