2N4010
Crystalonics
114.83kb
(2n4006 - 2n4011) silicon epitaxial junction pnp switching transistor.
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📁 Related Datasheet
2N4011 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor
(Crystalonics)
.DataSheet.co.kr Datasheet pdf - http://..net/
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2N4012 - NPN silicon annular transistor
(Motorola)
12 2N40 (SILICON)
~E3~ (TO·60)
stud isolated from case
NPN silicon annular transistor, designed for frequency multiplication applications.
MAXI MUM.
2N4013 - Silicon NPN Transistor
(ASI)
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2N4013
SILICON NPN TRANSISTOR
DESCRIPTION:
The ASI 2N4013 is Designed for General Purpose Switching and Amplifier Applications.
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2N4013 - (2N4013 / 2N4014) Transistors
(Motorola Semiconductor)
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2N4014 - Silicon Planar Epitaxial transistor
(STMicroelectronics)
2N4014
HIGH-VOLTAGE, HIGH CURRENT SWITCH
DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, hi.
2N4014 - (2N4013 / 2N4014) Transistors
(Motorola Semiconductor)
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2N4014 - SILICON NPN TRANSISTOR
(Central Semiconductor)
2N4014
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4014 is a silicon NPN transistor designed.
2N4015 - DUAL AMPLIFIER TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector 1 to Collector 2 Voltage
Voltage Rating and Lead to Case Collector-Base Voltage Emitter-Bas.
2N4016 - DUAL AMPLIFIER TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector 1 to Collector 2 Voltage
Voltage Rating and Lead to Case Collector-Base Voltage Emitter-Bas.
2N40 - N-Channel MOSFET
(ART CHIP)
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs design.
