2N459A
Motorola
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Pnp transistor.
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2N459 - PNP Transistor
(Motorola)
76 A 2N3
(GERMANIUM)
For Spe~ifications, See 2N350A Data.
2N378 thru 2N380(GERlt\ANIUM)
2N459,A
C(A10S-3)E1 l~ l~ ·
PNP germanium power transi.
2N456A - PNP Transistor
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2N456A (GERMANIUM) 2N457A 2N458A
PNP GERMANIUM POWER TRANSISTORS
. designed for general-purpose power amplifier and switching applications.
• High DC.
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..
..
..
..
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isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular.
2N457A - PNP Transistor
(Motorola)
2N456A (GERMANIUM) 2N457A 2N458A
PNP GERMANIUM POWER TRANSISTORS
. designed for general-purpose power amplifier and switching applications.
• High DC.
2N458A - PNP Transistor
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2N456A (GERMANIUM) 2N457A 2N458A
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. designed for general-purpose power amplifier and switching applications.
• High DC.
2N40 - N-Channel MOSFET
(ART CHIP)
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs design.
2N40 - N-Channel Power MOSFET
(Unisonic Technologies)
2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using .
2N40-V - 400V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N40-V
2.0A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40-V is a high voltage power MOSFET and is designed to.
2N4000 - Bipolar NPN Device
(Seme LAB)
2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
