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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
2N5209 2N5210
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
50 50 4.0 50 625 5.0
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 12
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.
2N5209 Datasheet
