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2N929 NPN silicon annular transistors

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Description

2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N930JAN AVAILABLE NPN silicon annular transistors for low-level, lownoise amplifier applications.CAS.

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Datasheet Specifications

Part number
2N929
Manufacturer
Motorola
File Size
106.46 KB
Datasheet
2N929-Motorola.pdf
Description
NPN silicon annular transistors

Applications

* CASE 22 (TO
* 18) Collector connected to C8se MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction

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