2N929 Datasheet (Motorola) - NPN silicon annular transistors

2N929, NPN silicon annular transistors

2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N930JAN AVAILABLE NPN silicon annular transistors for low-level, lownoise amplifier applications.

CASE 22 (TO 18) Collector connected to C8se MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCEO VCB