Datasheet4U Logo Datasheet4U.com

2N929 Datasheet - Motorola

2N929 NPN silicon annular transistors

2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N930JAN AVAILABLE NPN silicon annular transistors for low-level, lownoise amplifier applications. CASE 22 (TO 18) Collector connected to C8se MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCEO VCB .

2N929 Datasheet (106.46 KB)

Preview of 2N929 PDF
2N929 Datasheet Preview Page 2

Datasheet Details

Part number:

2N929

Manufacturer:

Motorola

File Size:

106.46 KB

Description:

Npn silicon annular transistors.

📁 Related Datasheet

2N929 Bipolar NPN Device (Seme LAB)

2N929A NPN silicon annular transistors (Motorola)

2N90 N-Channel MOSFET Transistor (Inchange Semiconductor)

2N90 N-CHANNEL POWER MOSFET (Unisonic Technologies)

2N90-FC N-CHANNEL MOSFET (UTC)

2N909 SI NPN LO-PWR BJT (New Jersey Semi-Conductor)

2N910 NPN silicon annular transistors (Motorola)

2N911 NPN silicon annular transistors (Motorola)

TAGS

2N929 NPN silicon annular transistors Motorola

2N929 Distributor