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2N998 Datasheet - Motorola

2N998 Darlington amplifier containing two NPN silicon annular transistors

2N998 (SILICON) Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, and high-input impedance. B, CASE 20(8) (TO 72) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCB VE.

2N998 Datasheet (76.77 KB)

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Datasheet Details

Part number:

2N998

Manufacturer:

Motorola

File Size:

76.77 KB

Description:

Darlington amplifier containing two npn silicon annular transistors.

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2N998 Darlington amplifier containing two NPN silicon annular transistors Motorola

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