2N998
Motorola
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Darlington amplifier containing two npn silicon annular transistors.
2N998 (SILICON)
Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, .
📁 Related Datasheet
2N995 - Bipolar PNP Device
(Seme LAB)
2N995
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package..
2N995 - PNP silicon annular transistors
(Motorola)
2N869 (SILICON)
2N995
CASE 22 (TO· IS)
Collector connected to case
PNP silicon annular transistors for high-frequency general-purpose amplifier app.
2N996 - PNPSILICON ANNULAR TRANSISTOR
(Motorola)
2N996 (SILICON)
PNPSILICON ANNULAR TRANSISTOR
· .. designed for general-purpose amplifier applications.
• Collector-Emitter Sustaining Voltage -
VCEO.
2N998 - DARLINGTON TRANSISTOR
(Motorola)
2N998
CASE 20-03, STYLE 8 T072 (TO206AF)
DARLINGTON TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltag.
2N90 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N90
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.
2N90 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N90
2.0A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advance.
2N90-FC - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N90-FC
Power MOSFET
2A, 900V N-CHANNEL POWER MOSFET
11
DESCRIPTION
The UTC 2N90-FC provide excellent RDS(ON), l.
2N909 - SI NPN LO-PWR BJT
(New Jersey Semi-Conductor)
.
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