MGY25N120 Insulated Gate Bipolar Transistor

Motorola

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N *Channel Enhancement.

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Datasheet Specifications

Part number: MGY25N120
Manufacturer: Motorola
File Size: 228.61 KB
Datasheet: MGY25N120_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor

Applications

* requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.
* Industry Standard High Power TO
* 264 Package (TO
* 3PBL) High Speed Eoff: 273 mJ/A typical at 125°C High Short C

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