MGY30N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode De.

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Datasheet Specifications

Part number: MGY30N60D
Manufacturer: Motorola
File Size: 254.58 KB
Datasheet: MGY30N60D_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Features

* 2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co
* packaged IGBT’s save space, reduce assembly time and cost.
* Indus

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MGY30N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola

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