MGY40N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode De.

📥 Download Datasheet

MGY40N60D Datasheet Preview — Preview of MGY40N60D PDF

Datasheet Specifications

Part number: MGY40N60D
Manufacturer: Motorola
File Size: 247.07 KB
Datasheet: MGY40N60D_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Features

* 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.10

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co
* packaged IGBT’s save space, reduce assembly time and cost.
* Indus

MGY40N60D Distributors

📁 Related Datasheet

📌 All Tags

MGY40N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola

Motorola MGY40N60D-like datasheet